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Product Detailed Parameters
- Description：IGBT PT 600V 100A
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 40A
- Power - Max：543 W
- Switching Energy：385µJ (on), 350µJ (off)
- Input Type：Standard
- Gate Charge：135 nC
- Td (on/off) @ 25°C：20ns/64ns
- Test Condition：400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The APT40GP60B2DQ2G is a single silicon Insulated Gate Bipolar Transistor (IGBT) from Microchip Technology, utilizing POWER MOS 7 technology. It features a Planar Trench Field Stop (PT) structure housed in a TO-247-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 150 A at 25°C. Key electrical parameters include a saturation voltage of 2.7 V at 50 A, gate charge of 165 nC, and switching times of 19 ns (turn-on) and 85 ns (turn-off). Power dissipation is rated at 625 W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- POWER MOS 7 technology integrates planar gate and trench field-stop structures for optimized performance.
- Planar Trench Field Stop (PT) design enhances ruggedness and reduces switching losses.
- Standard input type simplifies driver interface requirements.
Applications
- High-frequency power conversion circuits
- Motor drive inverters
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix DQ2G against official datasheets to confirm lead-free status and RoHS compliance details. Confirm that the TO-247-3 variant matches the required thermal and mechanical constraints for the target PCB layout. Cross-reference part numbers with authorized distributors to ensure authenticity and traceability.
Selection Notes
Select this component when a 600 V rating and 150 A continuous current capability are required in a standard TO-247 package. Consider the 2.7 V saturation voltage and 165 nC gate charge for efficiency calculations. Ensure the application operates within the specified -55°C to +150°C junction temperature range.
Part Context
This IGBT belongs to the APT40GP60 series, designed for general-purpose high-power applications. It shares the POWER MOS 7 platform with other variants like APT50GP60B2DQ2G but offers distinct current and thermal characteristics suited for specific load profiles.
Replacement Considerations
Direct substitutes may include APT50GP60B2DQ2G for higher current capacity or APT40GP60BG for legacy compatibility. Verify pinout and thermal resistance specifications before substitution.
