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The APT40GP90BG is a single IGBT module from the POWER MOS 7 series, manufactured by Microchip Technology. It features a PT (Punch-Through) structure with a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 40 A. The device is housed in a TO-247 package with through-hole mounting. Key electrical parameters include a maximum power dissipation of 543 W and a saturation voltage of 2.2 V at 25°C. The operating junction temperature range spans from -55°C to +150°C.
Verify the specific suffix BG against official datasheets to confirm pinout and thermal characteristics. Ensure compatibility with existing gate drive requirements and thermal management solutions before integration into designs.
Select this component for applications requiring 600 V blocking capability and 40 A continuous current handling. Consider the TO-247 package constraints for board layout and ensure adequate heatsinking to manage the 543 W power dissipation rating within the specified temperature limits.
This part belongs to the APT40GP90 family, which includes variants like APT40GP90J and APT40GP90JDQ2. While sharing similar electrical ratings, these variants differ in packaging, such as ISOTOP or chassis mount configurations, affecting thermal interface and mechanical integration strategies.