APT40GR120B2D30

$7.51

Description：IGBT NPT 1200V 88A TO-247-3
Series：-

SKU:c73715dbeec2 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 88A TO-247-3
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：88 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 40A
Power - Max：500 W
Switching Energy：1.38mJ (on), 906µJ (off)
Input Type：Standard
Gate Charge：210 nC
Td (on/off) @ 25°C：22ns/163ns
Test Condition：600V, 40A, 4.3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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APT40GR120B2D30

Overview

The APT40GR120B2D30 is a Combi Ultra Fast NPT-IGBT module integrating an IGBT and anti-parallel diode in a TO-247 package. It features a collector-emitter voltage of 1200 V, a continuous collector current of 88 A at 25°C case temperature, and a typical saturation voltage of 2.5 V. The device supports a total power dissipation of 500 W and operates within a junction temperature range of -55°C to 150°C. Key dynamic parameters include a turn-on delay time of 22 ns and a turn-off delay time of 163 ns at 25°C. The integrated diode provides a maximum average forward current of 30 A.

Feature Summary

Ultra Fast Non-Punch-Through (NPT) technology for superior ruggedness and high-frequency switching up to 50 kHz.
Short circuit withstand capability rated at 10 μs under specified conditions.
Low tail current and ultra-low leakage current characteristics.
RoHS compliant construction.

Applications

Induction heating systems
Motor control drives
General purpose inverters
Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific ordering suffix B2D30 against official Microchip documentation to confirm package outline and plating specifications. Confirm RoHS compliance status through the manufacturer's latest environmental declarations. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly due to component sensitivity.

Selection Notes

Select this component for applications requiring high switching frequencies up to 50 kHz and short circuit protection. Evaluate thermal management requirements based on the junction-to-case thermal resistance values provided in the datasheet. Consider the gate charge and threshold voltage specifications when designing the gate drive circuitry for optimal switching performance.

Part Context

This device belongs to the Ultra Fast NPT-IGBT family from Microchip Technology. It combines an IGBT die with an anti-parallel diode in a single TO-247 package. The product line emphasizes low saturation voltage and fast recovery characteristics suitable for demanding power conversion environments.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements may differ in switching speed or short circuit withstand ratings.