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The APT40GR120S is a single NPT IGBT transistor manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 88 A at 25°C. The device has a maximum power dissipation of 500 W and operates within a temperature range of -55°C to +150°C. Packaged in a surface-mount D3PAK (TO-268-3), it exhibits a typical saturation voltage of 3.2 V at 15 V gate drive and 40 A. Switching times are 22 ns turn-on and 163 ns turn-off.
Verify component authenticity through authorized Microchip distributors. Confirm RoHS compliance status prior to integration. Check for end-of-life notifications as the part may be discontinued. Ensure storage conditions meet humidity sensitivity level requirements. Validate datasheet revisions against specific production batches.
Select this component for applications requiring high-voltage isolation with surface-mount constraints. Consider the 1200V rating for medium-power industrial systems. Evaluate thermal management needs due to 500W dissipation capability. Compare switching speeds against system frequency requirements. Verify gate drive compatibility with specified test conditions.
This IGBT belongs to Microchip's discrete transistor lineup, utilizing NPT architecture. It serves as a switching element in power electronics. The D3PAK package facilitates PCB mounting. It complements other Microchip power devices for complete solution designs.
Check Microchip PCNs for direct substitutes. Verify pinout and electrical parameters match. Review thermal resistance differences. Confirm package dimensions for mechanical fit.