APT43GA90BD30

$6.14

Description：IGBT PT 900V 78A TO247
Series：-

SKU:bd03555b5e47 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT 900V 78A TO247
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：900 V
Current - Collector (Ic) (Max)：78 A
Current - Collector Pulsed (Icm)：129 A
Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 47A
Power - Max：337 W
Switching Energy：875µJ (on), 425µJ (off)
Input Type：Standard
Gate Charge：116 nC
Td (on/off) @ 25°C：12ns/82ns
Test Condition：600V, 25A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 [B]
Grade：-
Qualification：-

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APT43GA90BD30

Overview

The APT43GA90BD30 is a single IGBT from the Power MOS 8™ Punch-Through family, manufactured by Microchip Technology. It features a TO-247-3 through-hole package and operates with a maximum collector-emitter voltage of 900 V. The device supports a continuous collector current of 78 A at 25°C and dissipates up to 337 W of power. It has a typical saturation voltage of 2.5 V at 25°C and a gate-emitter voltage range of -30 V to +30 V. The component functions within an operating temperature range of -55°C to +150°C.

Feature Summary

Power MOS 8™ Punch-Through technology optimized for high efficiency and quiet switching characteristics.
Co-packaged with a DQ fast recovery diode to provide high commutation dv/dt ruggedness.
Designed for stable parallel operation in high-frequency applications.

Applications

High-frequency Switch Mode Power Supplies (SMPS)
Induction heating systems
Arc welding equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package style and internal configuration. Ensure that any alternative part numbers are cross-referenced with the manufacturer's selection guide to validate electrical compatibility before procurement.

Selection Notes

Select this component for designs requiring high-voltage handling with low switching losses. Evaluate thermal management requirements based on the 337 W power dissipation rating. Confirm that the drive circuitry accommodates the specified gate-emitter voltage limits for reliable operation.

Part Context

This device belongs to the Power MOS 8™ IGBT series, which utilizes Punch-Through technology. This family is engineered to deliver superior performance compared to previous generations, specifically targeting applications demanding high efficiency and robust switching capabilities in high-power environments.