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Product Detailed Parameters
- Description：IGBT PT 1200V 113A
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：113 A
- Current - Collector Pulsed (Icm)：170 A
- Vce(on) (Max) @ Vge, Ic：3.9V @ 15V, 45A
- Power - Max：625 W
- Switching Energy：900µJ (on), 905µJ (off)
- Input Type：Standard
- Gate Charge：185 nC
- Td (on/off) @ 25°C：18ns/100ns
- Test Condition：600V, 45A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The APT45GP120B2DQ2G is a single-channel Insulated Gate Bipolar Transistor (IGBT) from the POWER MOS 7® Combi series, manufactured by Microchip Technology. It utilizes silicon technology and features a TO-247-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 1200 V and delivers a continuous collector current of 45 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.3 V and a power dissipation rating of 329 W. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates an anti-parallel fast recovery diode with the IGBT chip in a single package configuration.
- Utilizes POWER MOS 7® trench gate field-stop technology for optimized switching performance.
- Features a ruggedized design suitable for high-power industrial applications.
Applications
- Industrial motor drives and inverters
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific suffix B2DQ2G against official Microchip documentation to confirm pinout compatibility and RoHS status. Ensure thermal management solutions align with the 329 W dissipation rating. Cross-reference datasheet revisions to confirm parameter stability before finalizing procurement specifications.
Selection Notes
Select this component when a 1200 V blocking capability and 45 A continuous current are required in a standard TO-247 footprint. Consider the integrated diode characteristics if synchronous rectification or freewheeling is needed. Evaluate thermal resistance values against the system's heat sink capabilities to ensure operation within the 150°C junction limit.
Part Context
This part belongs to the APT45GP120 family of high-voltage IGBTs. It shares the same core die and electrical characteristics as variants like APT45GP120J but differs in packaging and terminal configuration. The TO-247-3 form factor distinguishes it from module-based alternatives in the same voltage class.
Replacement Considerations
Direct substitutes may include other 1200V/45A IGBTs in TO-247 packages from manufacturers such as Infineon or STMicroelectronics, provided pinouts and thermal characteristics match. Verify that replacement parts meet the same switching speed and saturation voltage requirements.
