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Product Detailed Parameters
- Description：IGBT NPT 650V 118A D3PAK
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：118 A
- Current - Collector Pulsed (Icm)：224 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 45A
- Power - Max：543 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：203 nC
- Td (on/off) @ 25°C：15ns/100ns
- Test Condition：433V, 45A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：80 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：D3PAK
- Grade：-
- Qualification：-
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Overview
The APT45GR65SSCD10 is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Microsemi Corporation. It features a Non-Punch Through (NPT) design and is rated for 650 V collector-emitter voltage with a continuous collector current of 45 A. The device incorporates an integrated Schottky diode and is housed in a surface-mount D3PAK package. It complies with RoHS standards, ensuring it is lead-free.
Feature Summary
- Combines NPT IGBT technology with an integrated fast recovery Schottky diode for efficient switching.
- Designed for robust performance in high-power applications using non-punch-through architecture.
- Utilizes a surface-mount D3PAK package to facilitate automated assembly processes.
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the component's authenticity through authorized channels, as this part may be discontinued or subject to supply constraints. Confirm that the specific revision matches project requirements, particularly regarding the D3PAK package dimensions and thermal characteristics. Ensure compliance with environmental regulations such as RoHS if required by the final application.
Selection Notes
Select this component when a surface-mount solution is preferred over traditional through-hole packages like TO-247. The integrated Schottky diode eliminates the need for external parallel diodes, simplifying circuit design. Consider the thermal resistance of the D3PAK package during PCB layout to ensure adequate heat dissipation for the 45 A current rating.
Part Context
Microsemi Corporation, now part of Microchip Technology, specializes in semiconductor solutions for aerospace, defense, and communications. This IGBT belongs to a family of power devices designed for reliability in demanding environments. The transition from Microsemi to Microchip maintains support for legacy components while integrating them into broader product portfolios.
Replacement Considerations
Public documentation indicates the APT50SCE120B as a related product within the discontinuance notices, though it differs significantly in voltage and type. Direct pin-compatible replacements are not explicitly confirmed in public sources; engineering evaluation is required for any substitution.
