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The APT50GF120LRG is a single NPT IGBT manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 75 A at 25°C, with a pulsed current rating of 135 A. The device has a maximum power dissipation of 781 W and operates within a junction temperature range of -55°C to 150°C. Packaged in a TO-264 (L) through-hole housing, it includes a standard gate input type.
Verify the specific suffix 'LRG' against official Microchip documentation to confirm exact electrical characteristics and packaging details. Ensure compatibility with thermal management requirements for the specified 781 W power dissipation. Confirm that the TO-264 form factor aligns with the target PCB layout or heatsink interface constraints.
Select this component when a 1200 V rated single IGBT with 75 A continuous current capability is required. Consider the TO-264 package for through-hole mounting applications. Evaluate the thermal resistance and cooling solutions necessary to maintain junction temperatures within the -55°C to 150°C operational range during high-power switching cycles.
This part belongs to the Microchip APT series of discrete IGBTs. It is designed for medium to high-power applications requiring reliable switching at 1200 V. The NPT structure provides a balance between low on-state voltage and fast switching speeds, suitable for various power electronics topologies.
Public confirmed substitute part numbers are not available in the provided documentation.