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Product Detailed Parameters
- Description：IGBT PT 600V 150A
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：150 A
- Current - Collector Pulsed (Icm)：190 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 50A
- Power - Max：625 W
- Switching Energy：465µJ (on), 635µJ (off)
- Input Type：Standard
- Gate Charge：165 nC
- Td (on/off) @ 25°C：19ns/85ns
- Test Condition：400V, 50A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The APT50GP60B2DQ2G is a single Insulated Gate Bipolar Transistor (IGBT) from the POWER MOS 7 series, manufactured by Microchip Technology. It utilizes Punch-Through (PT) technology and is housed in a TO-247-3 variant package for through-hole mounting. The device features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 150 A at 25°C. Peak collector pulse current reaches 190 A. The saturation voltage is specified as 2.7 V maximum at 15 V gate drive and 50 A collector current. Switching characteristics include turn-on energy of 465 µJ and turn-off energy of 635 µJ under test conditions of 400 V, 50 A, 4.3 Ω gate resistance, and 15 V gate bias. Total power dissipation is rated at 625 W.
Feature Summary
- POWER MOS 7 Punch-Through technology provides low conduction loss and optimized switching performance.
- Standard input type allows compatibility with common gate driver circuits.
- Collector terminal connected to the case facilitates efficient thermal management via heatsink mounting.
Applications
- High-voltage power discrete switching applications
- Industrial motor control systems
- Uninterruptible power supply (UPS) inverters
Procurement Notes
Verify component authenticity against Microchip Technology standards upon receipt. Confirm compliance with RoHS3 and REACH regulations as documented. Check Product Change Notifications (PCN) for updates regarding lead finish, assembly location, or packaging label modifications. Ensure storage conditions adhere to Moisture Sensitivity Level 1 requirements to prevent damage prior to soldering.
Selection Notes
Select this component for designs requiring a 600 V rated single IGBT with high current handling capabilities. The TO-247-3 package suits through-hole PCB layouts or direct chassis mounting. Evaluate thermal resistance requirements based on the 625 W power dissipation limit. Compare switching energies against system efficiency targets. Ensure gate drive voltage aligns with the standard input specification for optimal saturation voltage performance.
Part Context
This part belongs to the APT50GP60 family of single IGBT transistors. Variants such as APT50GP60BG share similar core specifications but may differ in packaging or specific electrical tolerances. The APT50GP60B2DQ2G designation indicates specific manufacturing attributes within the POWER MOS 7 portfolio, distinct from module configurations like the APTGT50 series.
Replacement Considerations
Direct substitutes within the same family include APT50GP60BG. Verify pinout compatibility and thermal interface dimensions when replacing. Cross-reference datasheets for any variations in switching times or saturation voltages between variants.
