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Product Detailed Parameters
- Description：IGBT PT 600V 100A TO247
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：190 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 50A
- Power - Max：625 W
- Switching Energy：465µJ (on), 637µJ (off)
- Input Type：Standard
- Gate Charge：165 nC
- Td (on/off) @ 25°C：19ns/83ns
- Test Condition：400V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
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Overview
The APT50GP60BG is a single Insulated Gate Bipolar Transistor (IGBT) utilizing Power MOS 7 technology with Punch-Through (PT) design. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 100 A. The device is housed in a TO-247AD flange mount package with three terminals, where the case connects to the collector. It supports a maximum operating temperature of 150 °C and is compliant with RoHS standards.
Feature Summary
- Power MOS 7 technology for low conduction loss
- Flange mount construction with collector-connected case
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the manufacturer designation as Microsemi or Microchip Technology, reflecting corporate acquisition history. Confirm the specific package variant matches the TO-247AD specification. Ensure compliance requirements align with project standards for lead-free and RoHS certification before procurement.
Selection Notes
Select this component for applications requiring high current handling up to 100 A at 600 V blocking capability. The TO-247AD flange mount package facilitates direct heatsinking. Consider the 150 °C junction temperature limit for thermal management design in high-power environments.
Part Context
This part belongs to the APT series of IGBTs from Microchip Technology, formerly Microsemi. The series utilizes advanced Power MOS 7 technology to optimize the trade-off between conduction and switching losses. The APT50GP60BG represents a standard single-chip solution within this portfolio.
Replacement Considerations
Cross-reference with other APT50GP60 variants or equivalent 600V 100A PT-IGBTs in TO-247 packages. Verify pinout compatibility and thermal resistance specifications when substituting.
