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Product Detailed Parameters
- Description：IGBT MOD 1200V 84A 417W SOT227
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 50A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4
- Supplier Device Package：SOT-227
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：84 A
- Power - Max：417 W
- Current - Collector Cutoff (Max)：1.1 mA
- Input Capacitance (Cies) @ Vce：5.55 nF @ 25 V
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Overview
The APT50GR120JD30 is a single NPT IGBT module manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 50 A at 25°C. The device utilizes a SOT-227B package with screw mount installation. Key electrical parameters include a gate-emitter leakage current of 250 nA, a maximum power dissipation of 460 W, and a gate-emitter maximum voltage of 20 V. Operating temperatures range from -55°C to +150°C.
Feature Summary
- NPT technology for robust high-voltage performance
- Single configuration in a compact SOT-227B package
- Screw mount style for secure thermal management
Applications
- Industrial motor drives
- Power supply inverters
- Welding equipment
Procurement Notes
Verify the specific suffix JD30 against official Microchip documentation to confirm pinout and internal circuitry variations. Ensure compatibility with existing PCB layouts or terminal blocks designed for the SOT-227B form factor. Cross-reference the manufacturer part number directly with authorized distributors to avoid counterfeit components.
Selection Notes
Select this component when a 1.2 kV blocking capability and 50 A continuous current rating are required in a standard through-hole module format. Consider the thermal resistance characteristics inherent to the SOT-227B package for heat sink design. Evaluate the switching energy losses relative to the application frequency requirements.
Part Context
This part belongs to the APT series of Insulated Gate Bipolar Transistors from Microchip Technology. The series is known for combining MOSFET input characteristics with bipolar output conductivity. The APT50GR120JD30 represents a specific variant within this lineup, optimized for general-purpose power switching applications requiring high reliability.
Replacement Considerations
Direct substitutes may include other 1.2 kV, 50 A single IGBT modules in SOT-227 packages from Microchip or other manufacturers. Verify that replacement parts match the exact pin configuration and thermal specifications to ensure seamless integration without redesign.
