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The APT50GS60BRDQ2G is a single Insulated Gate Bipolar Transistor (IGBT) from the Thunderbolt HS series, manufactured by Microchip Technology. It utilizes Silicon technology and is housed in a TO-247-3 package for through-hole mounting. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 93 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.8 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 415 W. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity and datasheet alignment before integration. Confirm RoHS compliance status via official documentation. Check for product lifecycle changes as availability may be limited. Ensure ordering suffixes match specific manufacturing revisions. Validate thermal management requirements against the 415 W dissipation rating.
Select this component for circuits requiring 600 V blocking capability and 93 A continuous current handling. Compare the 2.8 V saturation voltage against system efficiency targets. Evaluate the TO-247-3 package suitability for the intended PCB layout or heatsink interface. Consider the operating temperature range limits for extreme environment deployments.
This part belongs to the APT50GS60 family of high-speed IGBTs. It shares the 600 V voltage class and TO-247 form factor with other variants like the APT50GT60BRG. Differences typically involve saturation voltage characteristics and switching speed optimizations tailored for specific frequency ranges within the Thunderbolt HS portfolio.
Publicly confirmed substitute part numbers are not available in the provided source data.