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The APT50GT120JU3 is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 100 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 416 W. Encased in an SOT-227-4 package with ISOTOP branding, it supports screw mount installation. The operational temperature range spans from -55°C to +150°C, with a maximum gate-emitter voltage of 20 V.
Verify component authenticity through authorized Microchip Technology distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions align with semiconductor handling standards to prevent moisture sensitivity damage during assembly processes.
Select this module when a 1.2 kV rating and 100 A continuous current capacity are required in a screw-mountable form factor. The SOT-227-4 package offers a compact footprint suitable for space-constrained designs. Evaluate thermal management requirements against the 416 W dissipation limit to ensure adequate heatsinking for sustained operation.
This component belongs to the APT series of discrete and power modules produced by Microchip Technology. It represents a standard silicon IGBT solution within their portfolio, distinct from SiC variants like the JU3 series which may offer different performance characteristics. The part serves as a fundamental building block for medium-power electronic converters.
APT50GF120JRD: Single IGBT, 1.2 kV, 75 A, SOT-227-4, Screw Mount. APT75GT120JU3: Single IGBT, 1.2 kV, 100 A, SOT-227-4, Screw Mount.