APT54GA60BD30

$5.94

Description：IGBT PT 600V 96A TO247
Series：-

SKU:75d9849ea698 Category: Single IGBTs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT PT 600V 96A TO247
Series：-
Mfr：Microchip Technology
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：96 A
Current - Collector Pulsed (Icm)：161 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 32A
Power - Max：416 W
Switching Energy：534µJ (on), 466µJ (off)
Input Type：Standard
Gate Charge：28 nC
Td (on/off) @ 25°C：17ns/112ns
Test Condition：400V, 32A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 [B]
Grade：-
Qualification：-

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APT54GA60BD30

Overview

The APT54GA60BD30 is a Power MOS 8™ IGBT manufactured by Microchip Technology, housed in a TO-247 package. It features a 600 V collector-emitter breakdown voltage and a typical saturation voltage of 2 V at 25°C. The device supports a continuous collector current of 54 A at 25°C and 30 A at 110°C. Maximum switching frequencies are rated at 50 kHz for hard-switched applications and 80 kHz for soft-switched conditions.

Feature Summary

Power MOS 8™ architecture optimized for high efficiency and quiet switching characteristics
Co-packaged with a DQ fast recovery diode to enhance commutation ruggedness
Designed for stable parallel operation in high-power conversion systems

Applications

High-frequency switch mode power supplies
Induction heating systems
Plasma cutting equipment

Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors. Confirm that the component meets all required RoHS compliance standards and environmental specifications before finalizing procurement orders.

Selection Notes

Select this component when a 600 V rating and moderate current handling are required for high-frequency switching. Ensure the thermal management design accommodates the specified power dissipation limits within the TO-247 package constraints for reliable long-term operation.

Part Context

This part belongs to the Power MOS 8™ IGBT family, which utilizes Punch-Through technology. This series is engineered to deliver superior switching performance and lower electromagnetic interference compared to previous generation devices, targeting advanced power electronics applications.