APT60GF120JRD

Overview

The APT60GF120JRD is a single NPT Low Frequency Combi IGBT module manufactured by Microchip Technology. It features a 1.2 kV collector-emitter maximum voltage (VCEO) and operates with a continuous collector current of 100 A at 25°C. The device utilizes a SOT-227-4 package designed for screw mount installation. Key electrical specifications include a gate-emitter leakage current of 100 nA, a maximum gate-emitter voltage of ±20 V, and a power dissipation rating of 520 W. The component supports an operating temperature range from -55°C to +150°C.

Feature Summary

• NPT Low Frequency Combi technology
• SOT-227-4 screw mount packaging

Applications

• Low frequency power conversion systems

Procurement Notes

Verify the specific revision level against the manufacturer's datasheet before procurement. Confirm that the SOT-227-4 footprint matches the target PCB or thermal interface design. Ensure the supplier provides original manufacturer documentation to validate authenticity and traceability.

Selection Notes

Select this component when a single-switch configuration with 1.2 kV blocking capability is required. The 100 A continuous current rating suits moderate power applications. Verify that the thermal management system can handle the 520 W power dissipation within the specified temperature limits.

Part Context

This part belongs to the Microchip APT series of discrete IGBT modules. It shares the SOT-227-4 form factor with other variants in the lineup but differs in current ratings and switching characteristics. It serves as a standalone switching element distinct from multi-chip bridge configurations.