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The APT60GF60JU2 is a single NPT THUNDERBOLT IGBT with an integrated anti-parallel diode in an ISOTOP SOT-227 package. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 60 A at Tc=95°C. The device supports switching frequencies up to 100 kHz, with a maximum power dissipation of 378 W at 25°C case temperature. The junction-to-case thermal resistance is 0.33 °C/W for the IGBT and 1.21 °C/W for the diode. It includes avalanche energy rating and soft recovery parallel diodes.
Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm datasheet revision status and RoHS compliance before integration. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly due to device sensitivity.
Select this component for applications requiring high-frequency switching up to 100 kHz and rugged performance. The positive temperature coefficient of VCE(sat) facilitates easy paralleling. Verify thermal management requirements against the specified junction-to-case thermal resistance values for both IGBT and diode sections under expected operating conditions.
This part belongs to the Microchip Technology ISOTOP family of power modules. It utilizes the SOT-227 package format designed for high-power density applications. The device integrates a single IGBT switch with a complementary fast recovery diode in one isolated module.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology technical support for cross-reference recommendations based on specific application parameters.
The device supports switching frequencies up to 100 kHz.
It features a positive temperature coefficient of VCE(sat), which ensures stable current sharing and makes easy paralleling possible.
Yes, the device is avalanche energy rated as well as RBSOA and SCSOA rated.