ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT PT 600V 198A
- Series：POWER MOS 7®
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：198 A
- Current - Collector Pulsed (Icm)：250 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 65A
- Power - Max：833 W
- Switching Energy：605µJ (on), 895µJ (off)
- Input Type：Standard
- Gate Charge：210 nC
- Td (on/off) @ 25°C：30ns/90ns
- Test Condition：400V, 65A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The APT65GP60L2DQ2G is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon technology and belongs to the POWER MOS 7 series, featuring Field-Stop Trench (FG) architecture. The device is housed in a TO-247-3 package designed for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 600 V and a continuous collector current of 198 A at 25°C. The saturation voltage is specified at 2.2 V, with a maximum power dissipation of 833 W. The gate-emitter voltage range spans from -30 V to +30 V. Operating temperatures extend from -55°C to +150°C.
Feature Summary
- Field-Stop Trench (FG) technology for optimized switching performance
- POWER MOS 7 series integration for high reliability
- TO-247 MAX package design for robust thermal management
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding inverters
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to ensure correct configuration. Confirm RoHS compliance status via the manufacturer's datasheet or environmental declaration. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component based on the required 600 V blocking capability and 198 A continuous current rating. Ensure the application circuit supports the specified 2.2 V saturation voltage and 833 W power dissipation limits. Verify that the gate drive voltage remains within the -30 V to +30 V range to prevent device damage.
Part Context
This IGBT is part of Microchip's broader portfolio of high-voltage power semiconductors. It shares the TO-247-3 form factor with other devices in the APT65GP60 family, such as the APT65GP60B2G, though internal trench structures may differ. It serves as a discrete switching element within larger power conversion systems.
Replacement Considerations
Direct substitutes must match the 600 V, 198 A, TO-247-3 specifications. Check for equivalent FG technology IGBTs from Microchip or other manufacturers. Verify pinout compatibility and thermal resistance characteristics before substitution.
