ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT PT 600V 121A TO247
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：121 A
- Current - Collector Pulsed (Icm)：202 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 40A
- Power - Max：520 W
- Switching Energy：715µJ (on), 607µJ (off)
- Input Type：Standard
- Gate Charge：298 nC
- Td (on/off) @ 25°C：21ns/133ns
- Test Condition：400V, 40A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 [B]
- Grade：-
- Qualification：-
Download product information
Overview
The APT68GA60B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Planar Field-Stop (PT) MOS technology and is housed in a TO-247 package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 68 A at 25°C. Key electrical parameters include a typical saturation voltage of 1.9 V, a gate-emitter threshold voltage range of 3 V to 5 V, and a maximum gate-emitter voltage of ±30 V. The component operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Planar Field-Stop (PT) technology for optimized switching performance
- High short-circuit capability for robust operation
- Low saturation voltage to reduce conduction losses
Applications
- Motor drives and inverters
- Switched-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix against the official Microchip datasheet to confirm pinout compatibility and thermal characteristics. Ensure that the procurement channel provides valid traceability documentation. Confirm RoHS compliance status as per the latest product change notifications before finalizing orders.
Selection Notes
Select this component for applications requiring high current handling with low conduction losses. Evaluate the thermal resistance requirements of the TO-247 package against the system's heat dissipation capabilities. Consider the switching speed trade-offs inherent to PT technology when designing snubber circuits or gate drive networks.
Part Context
This IGBT belongs to the APT series from Microchip Technology, which integrates legacy Advanced Power Technology designs. The TO-247 form factor is standard for medium-to-high power discrete semiconductor devices. This part serves as a direct replacement for older APT series components with matching voltage and current ratings.
Replacement Considerations
Direct substitutes include other 600V/68A TO-247 IGBTs from the same manufacturer family. Verify pinout alignment and thermal pad configuration before swapping. Cross-referencing with equivalent parts from other vendors requires careful validation of Vce(sat) and switching times.
