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Product Detailed Parameters
- Description：IGBT PT 600V 121A TO264
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：PT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：121 A
- Current - Collector Pulsed (Icm)：202 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 40A
- Power - Max：520 W
- Switching Energy：715µJ (on), 607µJ (off)
- Input Type：Standard
- Gate Charge：198 nC
- Td (on/off) @ 25°C：21ns/133ns
- Test Condition：400V, 40A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：22 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264 [L]
- Grade：-
- Qualification：-
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Overview
The APT68GA60LD40 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It features a Planar Field-Stop (PT) MOS technology with an N-channel configuration. The device is rated for a maximum collector-emitter voltage of 600 V and a continuous collector current of 68 A at 25°C. It utilizes a TO-247AD package designed for through-hole mounting. Key electrical parameters include a typical saturation voltage of 1.9 V, a gate-emitter threshold voltage range of 3.5 V to 5.5 V, and a maximum operating junction temperature of 175°C.
Feature Summary
- Planar Field-Stop (PT) MOS technology for optimized switching performance
- High short-circuit capability for robust operation in demanding environments
- Soft recovery Fast Recovery Epitaxial Diode (FRED) integrated in the module
Applications
- Motor drives and inverters
- Switched-mode power supplies (SMPS)
- Induction heating systems
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix 'LD40' against official Microchip documentation to confirm pinout compatibility and thermal characteristics. Ensure that the ordering information matches the exact datasheet revision required for your design. Cross-reference the component marking with the manufacturer's latest product change notifications to avoid discrepancies during assembly.
Selection Notes
Select this component when a 600 V IGBT with high current handling is required for power conversion applications. Consider the thermal resistance values provided in the datasheet for heatsink sizing. Evaluate the switching energy losses against the system's efficiency requirements. Confirm that the gate drive voltage levels are compatible with the specified threshold and maximum ratings.
Part Context
This part belongs to the Microchip APT series of discrete IGBTs, which are widely used in industrial power electronics. The APT68GA60LD40 represents a specific variant within the 600 V family, offering a balance between conduction and switching losses. It is designed to replace older generation devices in existing designs while providing improved performance metrics.
Replacement Considerations
Check for direct replacements such as the APT68GA60B or other variants in the same package. Verify that any substitute maintains the same pinout and thermal interface dimensions. Ensure that the replacement device meets or exceeds the original specifications for voltage, current, and switching speeds.
