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Product Detailed Parameters
- Description：IGBT MOD 1200V 112A 543W SOT227
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 70A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4
- Supplier Device Package：SOT-227
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：112 A
- Power - Max：543 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：7.26 nF @ 25 V
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Overview
The APT70GR120J is a single IGBT module manufactured by Microchip Technology under the POWER MOS 7 series. It utilizes PT (Punch-Through) technology and features an ISOTOP package for base mounting. The device supports a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 70 A at 25°C. Maximum power dissipation is rated at 329 W, with a saturation voltage of 3.9 V at 45 A and 15 V gate drive. Operating temperatures range from -55°C to +150°C junction temperature.
Feature Summary
- ISOTOP insulated base design for efficient thermal management
- POWER MOS 7 planar trench gate technology
- High short-circuit capability
Applications
- Motor drives
- Induction heating
- Switched-mode power supplies
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology before procurement. Confirm that the ISOTOP package dimensions match the intended heatsink interface requirements. Ensure gate drive circuits are compatible with the specified voltage limits to prevent device damage during operation.
Selection Notes
Select this component for applications requiring high voltage isolation and robust thermal performance in compact footprints. Compare the 70 A current rating against peak load demands to ensure adequate margin. Evaluate the 3.9 V saturation voltage impact on conduction losses relative to alternative modules in the same voltage class.
Part Context
This part belongs to the APT discrete semiconductor family, which integrates advanced silicon technologies for power switching. The ISOTOP packaging distinguishes it from standard leaded modules by providing a large metal base for direct screw mounting to cold plates or heatsinks, optimizing heat transfer efficiency.
Replacement Considerations
Check for updated suffixes such as 'MI' which may indicate minor manufacturing changes without functional alteration. Verify pinout compatibility if substituting with other 1200V ISOTOP modules from different manufacturers.
