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Product Detailed Parameters
- Description：IGBT NPT 650V 134A TO-247
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：134 A
- Current - Collector Pulsed (Icm)：260 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 70A
- Power - Max：595 W
- Switching Energy：1.51mJ (on), 1.46mJ (off)
- Input Type：Standard
- Gate Charge：305 nC
- Td (on/off) @ 25°C：19ns/170ns
- Test Condition：433V, 70A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The APT70GR65B is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes NPT technology and Power MOS 8® architecture. The device features a collector-emitter voltage of 650 V and a continuous collector current rating of 65 A to 70 A, depending on the specific datasheet reference. It is housed in a TO-247 through-hole package. The component is designed for high-power switching applications requiring robust performance.
Feature Summary
- Utilizes NPT (Non-Punch Through) technology for improved short-circuit ruggedness
- Incorporates Power MOS 8® gate structure for optimized switching characteristics
- Designed for high-voltage operation with 650 V collector-emitter rating
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency induction heating
Procurement Notes
Verify the specific datasheet revision when ordering, as collector current ratings may vary between 65 A and 70 A across different documentation versions. Confirm the TO-247 package type matches your thermal management design. Ensure compatibility with standard IGBT driver circuits due to the Power MOS 8® gate requirements.
Selection Notes
Select this component for applications requiring high voltage blocking capability and moderate current handling in a through-hole format. Consider the trade-off between switching speed and conduction losses inherent to NPT technology. Ensure adequate heatsinking is provided given the 595 W power dissipation rating found in some references.
Part Context
This part belongs to Microchip's discrete IGBT portfolio, specifically leveraging their Power MOS 8® platform. It serves as a replacement or upgrade option for older generation IGBTs in industrial power electronics. The TO-247 package allows for direct mounting onto standard heat sinks used in medium-power converters.
Replacement Considerations
Direct substitutes should be sought within the same 650 V, ~70 A IGBT category from Microchip or other manufacturers using comparable NPT technology. Verify pinout compatibility and thermal resistance values before substitution.
