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Product Detailed Parameters
- Description：IGBT TRENCH FIELD STP 1200V 200A
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：225 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
- Power - Max：833 W
- Switching Energy：8045µJ (on), 7640µJ (off)
- Input Type：Standard
- Gate Charge：425 nC
- Td (on/off) @ 25°C：60ns/620ns
- Test Condition：800V, 75A, 1Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：-
- Grade：-
- Qualification：-
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FAQ
Is the APT75GN120B2G a silicon or silicon carbide device?
The provided documentation does not specify the semiconductor material technology for this specific part number.
What is the maximum collector-emitter voltage for this module?
Voltage ratings are not confirmed in the available source data.
Does this component use the ISOTOP package?
Package details cannot be verified from the current information.
