SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APT75GT120JRDQ3 is a single IGBT module from Microchip Technology, utilizing NPT technology for medium-frequency applications. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 75 A at 25°C. The device is housed in an ISOTOP-4 (SOT-227) package with screw mount installation. Key electrical parameters include a maximum power dissipation of 480 W, a gate-emitter leakage current of 600 nA, and a gate-emitter voltage range of -20 V to +20 V. Operating temperatures span from -55°C to +150°C.
Verify the specific suffix DQ3 against official Microchip documentation to confirm the inclusion of the integrated anti-parallel diode variant. Ensure compatibility with ISOTOP-4 thermal management solutions and screw-mount mechanical constraints. Cross-reference datasheet revisions for any updates to thermal resistance or electrical limits before finalizing procurement specifications.
Select this component for applications requiring robust NPT technology and integrated freewheeling diodes in a compact form factor. Consider the 480 W power dissipation capability and 1200 V blocking voltage when designing thermal management systems. Verify that the 75 A continuous current rating aligns with peak load requirements and ambient operating conditions within the specified temperature range.
This part belongs to the APT series of IGBT modules, specifically designed for high-power industrial applications. The ISOTOP packaging family offers standardized mounting interfaces for efficient heat sinking. As a single configuration device, it serves as a fundamental building block for half-bridge or full-bridge converter topologies in medium-frequency power electronics.
APT75GT120JRDQ4