APT80GA60LD40

APT80GA60LD40

$10.03
  • Description:IGBT PT 600V 143A TO-264
  • Series:POWER MOS 8™

SKU:296ae6142310 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 600V 143A TO-264
  • Series:POWER MOS 8™
  • Mfr:Microchip Technology
  • Package:Tube
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):143 A
  • Current - Collector Pulsed (Icm):240 A
  • Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 47A
  • Power - Max:625 W
  • Switching Energy:840µJ (on), 751µJ (off)
  • Input Type:Standard
  • Gate Charge:230 nC
  • Td (on/off) @ 25°C:23ns/158ns
  • Test Condition:400V, 47A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr):22 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-264-3, TO-264AA
  • Supplier Device Package:TO-264
  • Grade:-
  • Qualification:-

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APT80GA60LD40

Overview

The APT80GA60LD40 is a single-configuration Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It utilizes Silicon technology and is housed in a TO-264 package with a through-hole mounting style. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 145 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.2 V, a gate-emitter voltage range of -30 V to +30 V, and a power dissipation rating of 625 W. The component operates within a temperature range from -55°C to +150°C.

Feature Summary

  • Single IGBT configuration for discrete switching applications
  • High thermal stability with an operating junction temperature up to 150°C
  • Robust voltage handling capability rated at 600 V

Applications

  • Industrial motor drives
  • Uninterruptible power supplies
  • Inverter circuits

Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with Microchip Technology or authorized distributors before procurement. Confirm that the TO-264 package dimensions match the target PCB footprint requirements. Ensure that the thermal management design accommodates the 625 W power dissipation rating under expected load conditions to maintain safe operating temperatures.

Selection Notes

Select this component when a single high-current silicon IGBT is required for 600 V systems. The 145 A continuous current rating suits moderate to high-power industrial loads. Consider the TO-264 package for through-hole assembly if surface-mount options are not feasible. Evaluate thermal resistance values against the application's heat sink capabilities to ensure reliable operation within the specified temperature limits.

Part Context

This part belongs to Microchip's portfolio of discrete power semiconductors, specifically the IGBT transistor category. It serves as a fundamental switching element in power electronics, distinct from integrated modules or diode-only packages. The product line focuses on providing reliable silicon-based solutions for general-purpose power conversion tasks across various industrial sectors.

Replacement Considerations

Consult official Microchip documentation for direct pin-compatible substitutes or updated series replacements. Verify that any alternative component matches the 600 V voltage rating, 145 A current capacity, and TO-264 package form factor to ensure mechanical and electrical compatibility without redesigning the circuit board.

APT80GA60LD40APT80GA60LD40
$10.03
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