APT80GA90B

Overview

The APT80GA90B is a single Power Trench IGBT manufactured by Microchip Technology, housed in a TO-247 [B] through-hole package. It features a maximum collector-emitter voltage (Vceo) of 900 V and a continuous collector current (Ic) of 145 A at 25°C. The device supports a pulsed collector current (Icm) of 239 A and has a maximum power dissipation (Pd) of 625 W. Key electrical parameters include a saturation voltage (Vce(on)) of 3.1 V at 15 V gate drive and 47 A collector current, a gate charge of 200 nC, and switching times of 18 ns (turn-on) and 149 ns (turn-off) under specified test conditions. The operating junction temperature range spans from -55°C to +150°C.

Feature Summary

• Utilizes Power Trench technology for optimized switching performance and low conduction losses.
• Designed with a robust TO-247 [B] leaded package suitable for high-power thermal management applications.

Applications

• High-frequency motor drives
• Switch-mode power supplies
• Induction heating systems

Procurement Notes

Verify the specific manufacturer part number against official Microchip Technology documentation to ensure authenticity. Confirm that the component matches the required TO-247 [B] package style and electrical ratings before integration. Check for any recent product change notifications or lifecycle status updates directly from the manufacturer's official channels to avoid obsolescence risks during procurement.

Selection Notes

Select this component when a 900 V rated single IGBT with high current capability is required. Ensure the application design accounts for the 3.1 V saturation voltage at the intended operating current to manage thermal dissipation effectively within the 625 W limit. Verify that the gate drive circuitry can supply the necessary 200 nC gate charge to achieve the specified switching speeds without excessive loss.

Part Context

This device belongs to the APT80GA90 series of Power Trench IGBTs produced by Microchip Technology. It shares the same core specifications as variants such as the APT80GA90LD40 but differs in packaging configuration. The standard TO-247 [B] form factor distinguishes it from surface-mount or module alternatives within the broader portfolio.

Replacement Considerations

Direct substitutes may include other 900 V, 145 A single IGBTs in TO-247 packages from Microchip, such as the APT80GA90LD40, provided the pinout and thermal characteristics are compatible. Cross-brand replacements require careful verification of Vce(sat), switching energy, and gate charge parameters.