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The APT80GP60J is a single IGBT module manufactured by Microchip Technology, utilizing silicon PT MOS 7 technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 151 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.2 V and a gate-emitter leakage current of 100 nA. Power dissipation is rated at 462 W. It operates within a temperature range of -55°C to +150°C, with a maximum gate-emitter voltage of 20 V. The component is housed in an ISOTOP-4 package, designed for surface mount or screw mounting applications.
Verify the specific datasheet revision and Product Change Notification (PCN) documents prior to procurement. Confirm that the ISOTOP-4 package dimensions align with the target PCB footprint and thermal management requirements. Ensure the supplier provides original manufacturer documentation to validate authenticity and technical specifications.
Select this component when a single high-current switch is required in a compact form factor. The 600 V rating suits low-voltage AC/DC conversion systems. Compare the 151 A continuous current against peak load demands. Evaluate the 462 W power dissipation against available heatsinking solutions to maintain junction temperatures within the specified operational limits.
This part belongs to the Microchip APT series of discrete semiconductor modules. It shares the ISOTOP-4 packaging family with variants like APT40GP60J and APT65GP60JDQ2. These modules typically serve as core switching elements in medium-power electronic converters and industrial control systems requiring robust silicon-based insulation and thermal performance.
Direct substitutes include APT40GP60J for lower current needs or APT65GP60JDQ2 for similar current ratings in the same package. Verify pin compatibility and thermal resistance values before swapping. Cross-reference datasheets to ensure voltage and current margins meet the specific circuit requirements.