APT85GR120B2

APT85GR120B2

$12.02
  • Description:IGBT NPT 1200V 170A T-MAX
  • Series:-

SKU:a2280987a880 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT NPT 1200V 170A T-MAX
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):170 A
  • Current - Collector Pulsed (Icm):340 A
  • Vce(on) (Max) @ Vge, Ic:3.2V @ 15V, 85A
  • Power - Max:962 W
  • Switching Energy:6mJ (on), 3.8mJ (off)
  • Input Type:Standard
  • Gate Charge:660 nC
  • Td (on/off) @ 25°C:43ns/300ns
  • Test Condition:600V, 85A, 4.3Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:T-MAX™
  • Grade:-
  • Qualification:-

Download product information

APT85GR120B2

Overview

The APT85GR120B2 is a silicon-based Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It features a single configuration housed in a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 170 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.5 V, a gate-emitter maximum voltage of 30 V, and a power dissipation rating of 962 W. The component operates within a temperature range of -55°C to +150°C, with a typical gate-emitter leakage current of 250 nA.

Feature Summary

  • High-voltage capability suitable for demanding power switching applications
  • Robust thermal performance with high power dissipation rating
  • Standardized TO-247-3 packaging for reliable through-hole mounting

Applications

  • Industrial motor drives and inverters
  • Uninterruptible power supply (UPS) systems
  • High-frequency welding equipment

Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official Microchip documentation to ensure authenticity. Confirm RoHS compliance status and check for any recent Product Change Notifications (PCNs) regarding assembly sites or material updates before finalizing procurement orders.

Selection Notes

Select this component based on its 1.2 kV blocking voltage and 170 A continuous current capacity. Ensure the application circuit design accommodates the 3.5 V saturation voltage for efficient conduction. Verify that the thermal management system can handle the 962 W power dissipation rating within the specified operating temperature limits.

Part Context

This IGBT belongs to the APT series from Microchip Technology, designed for general-purpose high-power switching. It utilizes standard silicon technology and is distinct from other variants in the lineup by its specific current and voltage ratings within the TO-247 form factor.

Replacement Considerations

Consult official Microchip cross-reference guides for verified substitutes. Ensure any replacement matches the TO-247-3 package, 1.2 kV voltage rating, and comparable current handling capabilities.

APT85GR120B2APT85GR120B2
$12.02
Buy Now