SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The APT85GR120B2 is a silicon-based Insulated Gate Bipolar Transistor (IGBT) manufactured by Microchip Technology. It features a single configuration housed in a TO-247-3 through-hole package. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 170 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.5 V, a gate-emitter maximum voltage of 30 V, and a power dissipation rating of 962 W. The component operates within a temperature range of -55°C to +150°C, with a typical gate-emitter leakage current of 250 nA.
Verify the specific ordering suffix and manufacturer lot codes against official Microchip documentation to ensure authenticity. Confirm RoHS compliance status and check for any recent Product Change Notifications (PCNs) regarding assembly sites or material updates before finalizing procurement orders.
Select this component based on its 1.2 kV blocking voltage and 170 A continuous current capacity. Ensure the application circuit design accommodates the 3.5 V saturation voltage for efficient conduction. Verify that the thermal management system can handle the 962 W power dissipation rating within the specified operating temperature limits.
This IGBT belongs to the APT series from Microchip Technology, designed for general-purpose high-power switching. It utilizes standard silicon technology and is distinct from other variants in the lineup by its specific current and voltage ratings within the TO-247 form factor.
Consult official Microchip cross-reference guides for verified substitutes. Ensure any replacement matches the TO-247-3 package, 1.2 kV voltage rating, and comparable current handling capabilities.