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Product Detailed Parameters
- Description：IGBT NPT 1200V 170A TO-264
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：170 A
- Current - Collector Pulsed (Icm)：340 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 85A
- Power - Max：962 W
- Switching Energy：6mJ (on), 3.8mJ (off)
- Input Type：Standard
- Gate Charge：660 nC
- Td (on/off) @ 25°C：43ns/300ns
- Test Condition：600V, 85A, 4.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-264-3, TO-264AA
- Supplier Device Package：TO-264
- Grade：-
- Qualification：-
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Overview
The APT85GR120L is a single NPT (Non-Punch-Through) IGBT manufactured by Microchip Technology. It features a collector-emitter voltage rating of 1200 V and a continuous collector current of 170 A at 25°C. The device has a maximum power dissipation of 962 W and a collector-emitter saturation voltage of 3.5 V. It utilizes a TO-264 through-hole package with three pins. Gate-emitter leakage current is specified at 250 nA, and the maximum gate-emitter voltage is defined in official documentation.
Feature Summary
- Utilizes Non-Punch-Through (NPT) technology for robust performance
- Designed for high-voltage switching applications up to 1200 V
- Capable of handling high continuous collector currents
Applications
- Industrial motor drives
- Uninterruptible Power Supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific datasheet version from Microchip Technology or authorized distributors to confirm exact electrical characteristics and mechanical dimensions. Ensure the TO-264 package compatibility with your PCB layout. Cross-reference part numbers to distinguish between original Microchip/Infineon lineage variants if necessary.
Selection Notes
Select this component for applications requiring high voltage isolation and significant current handling capabilities. Consider the thermal management requirements associated with the 962 W power dissipation rating. Evaluate the gate drive requirements against the specified leakage and voltage limits to ensure reliable switching operation within the system design.
Part Context
This discrete IGBT belongs to the family of power semiconductors used in medium-to-high power conversion circuits. It serves as a critical switching element in inverters and converters. The NPT structure provides a balance between low conduction losses and high blocking capability, making it suitable for demanding industrial environments.
Replacement Considerations
Consult official substitution guides for equivalent NPT IGBTs in the 1200 V / 170 A class. Verify pinout compatibility and thermal resistance values when considering alternatives from other manufacturers or different series within the same product line.
