APTC60DDAM35T3G

APTC60DDAM35T3G

  • Description:MOSFET 2N-CH 600V 72A SP3
  • Series:-

SKU:240ed2cf9582 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 600V 72A SP3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):600V
  • Current - Continuous Drain (Id) @ 25°C:72A
  • Rds On (Max) @ Id, Vgs:35mOhm @ 72A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs:518nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:14000pF @ 25V
  • Power - Max:416W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Grade:-
  • Qualification:-

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APTC60DDAM35T3G

Overview

The APTC60DDAM35T3G is a Power MOSFET module from Microchip Technology, utilizing CoolMOS SP1 technology. It features a dual-diode configuration with an integrated N-channel MOSFET and a common source topology. The device is housed in the SP-1 package and supports screw mounting for secure installation.

Feature Summary

  • Integrates a high-voltage N-channel MOSFET with a complementary fast-recovery diode within a single module.
  • Utilizes CoolMOS SP1 silicon planar technology to optimize switching performance and reduce conduction losses.
  • Provides a robust mechanical design suitable for high-power applications requiring reliable thermal management.

Applications

  • High-frequency power conversion circuits
  • Motor drive inverters
  • Industrial power supplies

Procurement Notes

Verify the specific suffix against official datasheets to confirm package type and electrical ratings. Ensure compatibility with existing thermal interface materials and mounting hardware. Confirm RoHS compliance status through current manufacturer documentation before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring integrated freewheeling diodes to minimize parasitic inductance. Evaluate thermal resistance characteristics against system heat dissipation requirements. Verify gate charge parameters for driver circuit compatibility and switching speed optimization.

Part Context

This module belongs to Microchip's discrete and power modules category, specifically designed for efficient power switching. It represents the integration of advanced silicon planar technology into a compact form factor, supporting modern industrial and automotive power electronics architectures.

Replacement Considerations

Consult official substitution guides for equivalent CoolMOS SP1 series modules. Verify pinout compatibility and thermal footprint alignment when considering alternative part numbers from the same product family.

APTC60DDAM35T3GAPTC60DDAM35T3G

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