APTC60DDAM70CT1G

Overview

The APTC60DDAM70CT1G is a dual boost chopper module manufactured by Microsemi Corporation, featuring Super Junction MOSFETs and SiC chopper diodes. It is designed for chassis mounting with an SP1 package. The device supports a drain-source voltage of 600V and a continuous current of 39A. Key electrical parameters include a maximum on-resistance of 70 mOhm at 39A and 10V gate drive, a threshold voltage of 3.9V at 2.7mA, and a power dissipation rating of 250W.

Feature Summary

• Integrates Super Junction MOSFET technology with Silicon Carbide (SiC) chopper diodes for enhanced performance.
• Configured as a dual boost chopper module suitable for high-efficiency power conversion applications.

Applications

• Boost chopper circuits in power supply systems
• High-efficiency DC-DC conversion modules
• Industrial power electronics requiring combined MOSFET and SiC diode integration

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to the specialized nature of hybrid power modules. Confirm that the received unit matches the specific SP1 package configuration and internal die arrangement documented in official Microsemi datasheets. Request relevant quality certificates and traceability documentation to ensure compliance with industrial standards. Inspect physical terminals for integrity prior to installation.

Selection Notes

Select this module when designing boost converter topologies that benefit from the low switching losses of Super Junction MOSFETs combined with the fast recovery characteristics of SiC diodes. Ensure the thermal management system can handle the 250W dissipation rating within the specified operating temperature range. Verify that the control circuitry provides the appropriate gate drive voltage to achieve the specified 70 mOhm on-resistance.

Part Context

This component belongs to Microsemi's portfolio of advanced power semiconductor modules, specifically targeting applications where efficiency and power density are critical. The combination of silicon-based super junction technology with silicon carbide diodes represents a hybrid approach to reducing conduction and switching losses in high-frequency power conversion environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult Microsemi technical support for current equivalent recommendations if this specific model is unavailable.

FAQ

What type of diodes are integrated into the APTC60DDAM70CT1G module?

The module integrates Silicon Carbide (SiC) chopper diodes alongside the Super Junction MOSFETs.

What is the maximum on-resistance specification for this module?

The maximum on-resistance is 70 mOhm, measured at a drain current of 39A and a gate voltage of 10V.