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Product Detailed Parameters
- Description：MOSFET 4N-CH 600V 49A SP4
- Series：CoolMOS™
- Mfr：Microchip Technology
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：4 N-Channel (Full Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：600V
- Current - Continuous Drain (Id) @ 25°C：49A
- Rds On (Max) @ Id, Vgs：45mOhm @ 22.5A, 10V
- Vgs(th) (Max) @ Id：3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：7200pF @ 25V
- Power - Max：250W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP4
- Supplier Device Package：SP4
- Grade：-
- Qualification：-
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Overview
The Microchip APTC60HM45SCTG is a power module utilizing CoolMOS technology with an integrated Silicon Carbide (SiC) Schottky barrier diode. It features a SP4 package designed for direct heatsink mounting to minimize junction-to-case thermal resistance, specified at 0.5 °C/W for the MOSFET and 1.42 °C/W for the SiC diode. The device supports a wide operating junction temperature range from -40°C to 150°C and a storage temperature range of -40°C to 125°C.
Feature Summary
- Integrates CoolMOS transistor technology with a high-performance SiC diode for enhanced switching efficiency.
- SP4 package design enables direct heatsink attachment to optimize thermal dissipation and reduce thermal resistance.
- Capable of stable operation under high-power conditions with a broad junction temperature tolerance.
Applications
- Switching power supplies
- Industrial applications
Procurement Notes
Verify the specific datasheet version and product change notifications prior to procurement. Confirm that the SP4 package dimensions and pinout align with the target PCB footprint and mechanical constraints. Ensure thermal interface materials are compatible with the module's base plate specifications to maintain the rated thermal performance.
Selection Notes
Select this component when high thermal stability and efficient heat dissipation are critical for the application. The combination of CoolMOS and SiC technology offers advantages in high-frequency switching environments. Evaluate the thermal management requirements against the specified junction-to-case thermal resistance values to ensure adequate cooling solutions are implemented.
Part Context
This module belongs to Microchip's discrete semiconductor module portfolio, specifically within the power module category. It represents a solution combining silicon-based MOSFETs with silicon carbide diodes to improve overall system efficiency. The SP4 packaging is part of a series of standardized modules designed for robust industrial and commercial power electronics applications.
Replacement Considerations
Consult official Microchip documentation for verified substitute part numbers. Cross-referencing should be limited to components explicitly listed as equivalents or direct replacements in manufacturer errata or product change notifications.
