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The APTC60HM45T1G is a silicon-based CoolMOS SP1 power module manufactured by Microchip Technology. It integrates high-voltage MOSFETs with SiC diodes in an SP4 package designed for direct heatsink mounting. The device features a junction-to-case thermal resistance of 0.5 °C/W for the MOSFET and 1.42 °C/W for the SiC diode. It operates within a junction temperature range of -40°C to 150°C, with a recommended operating limit of TJmax minus 25°C. Storage temperatures range from -40°C to 125°C, and case temperatures are supported up to 100°C.
Verify the specific suffix 'SCTG' versus 'T1G' when sourcing, as datasheets may reference different packaging or revision codes. Confirm RoHS compliance details directly from the manufacturer's latest documentation. Ensure the procurement channel provides the official Microchip Technology data sheet and errata documents for the SP4 package to validate mechanical and electrical specifications before integration.
Select this component for applications requiring low thermal resistance and high-temperature resilience. The SP4 package facilitates efficient cooling through direct heatsink attachment. Consider the combined CoolMOS and SiC diode configuration for optimized efficiency in hard-switching applications. Verify that the system design accommodates the specified maximum case and junction temperature limits to ensure long-term reliability.
This module belongs to the Microchip CoolMOS SP1 family, utilizing advanced silicon planar technology. The SP4 package is engineered for compact power modules, offering superior thermal management compared to traditional discrete solutions. It represents a transition towards higher power density designs in industrial and consumer electronics power stages.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Microchip Technology for qualified alternatives within the CoolMOS SP series.