APTC60HM70SCTG

Description：MOSFET 4N-CH 600V 39A SP4
Series：CoolMOS™

SKU:2c0252e2c2be Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET 4N-CH 600V 39A SP4
Series：CoolMOS™
Mfr：Microchip Technology
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：4 N-Channel (Full Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：600V
Current - Continuous Drain (Id) @ 25°C：39A
Rds On (Max) @ Id, Vgs：70mOhm @ 39A, 10V
Vgs(th) (Max) @ Id：3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs：259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：7000pF @ 25V
Power - Max：250W
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SP4
Supplier Device Package：SP4
Grade：-
Qualification：-

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APTC60HM70SCTG

Overview

The Microchip APTC60HM70SCTG is a CoolMOS power module featuring integrated Silicon Carbide (SiC) diodes. It utilizes SP4 packaging to provide stable thermal performance with a junction-to-case thermal resistance of 0.5 °C/W for the MOSFET and 1.42 °C/W for the SiC diode. The device operates within a junction temperature range of -40°C to 150°C, supporting high-power applications while maintaining low thermal impedance.

Feature Summary

Integrates CoolMOS technology with Silicon Carbide diodes for enhanced efficiency
SP4 package design enables direct mounting to heat sinks for improved thermal stability
Low junction-to-case thermal resistance ensures reliable operation under high power loads

Applications

Switching power supplies
Industrial motor control systems
High-efficiency power conversion units

Procurement Notes

Verify the specific suffix 'SCTG' against official Microchip documentation to confirm pinout compatibility and thermal specifications. Ensure the procurement source provides valid traceability for this discrete power module variant. Cross-reference the datasheet revision date to guarantee alignment with current manufacturing standards before integration into designs.

Selection Notes

Select this component when designing circuits requiring the combined benefits of CoolMOS switching characteristics and SiC diode recovery speeds. The SP4 package is suitable for applications demanding robust thermal management and direct heatsink mounting. Evaluate thermal resistance values against system constraints to ensure adequate cooling solutions are implemented for sustained high-power operation.

Part Context

This part belongs to the APTC series of power modules from Microchip Technology. It represents a hybrid solution combining lateral DMOS technology with vertical SiC diodes. The series is engineered for high-frequency switching applications where minimizing conduction and switching losses is critical for overall system efficiency and thermal performance.