APTC80DDA15T3G

APTC80DDA15T3G

  • Description:MOSFET 2N-CH 800V 28A SP3
  • Series:-

SKU:1ac8f04d4015 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 800V 28A SP3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):800V
  • Current - Continuous Drain (Id) @ 25°C:28A
  • Rds On (Max) @ Id, Vgs:150mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs:180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:4507pF @ 25V
  • Power - Max:277W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Grade:-
  • Qualification:-

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APTC80DDA15T3G

Overview

The APTC80DDA15T3G is a dual N-channel Super Junction MOSFET array manufactured by Microchip Technology. It features an 800V drain-source voltage and a continuous drain current of 28A. The device utilizes the SP3 package for efficient thermal management. Key electrical parameters include a maximum on-resistance optimized for low conduction losses. It operates within a standard temperature range suitable for industrial applications.

Feature Summary

  • Dual N-channel configuration with Super Junction technology for enhanced efficiency
  • High voltage rating of 800V supporting robust power switching applications
  • SP3 package design providing superior thermal performance and compact footprint

Applications

  • AC and DC motor control systems
  • Switched Mode Power Supplies (SMPS)
  • Power Factor Correction circuits

Procurement Notes

Verify the specific datasheet revision and ordering suffix to ensure compatibility with your design requirements. Confirm that the SP3 package dimensions match your PCB layout constraints. Check for any specific handling instructions related to electrostatic discharge protection during assembly and storage processes.

Selection Notes

Select this component for high-voltage applications requiring efficient power conversion. The dual channel structure allows for bridge configurations in motor drives or synchronous rectification. Evaluate thermal resistance values against your system's heat dissipation capabilities to ensure reliable operation under load conditions.

Part Context

This part belongs to Microchip's discrete semiconductor product line, specifically focusing on power MOSFETs. It complements their broader portfolio of power management and interface solutions. The Super Junction technology represents an advancement in power switching efficiency compared to traditional planar MOSFET structures.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Engineers should consult official Microchip resources or authorized distributors for potential alternatives based on specific pinout and electrical parameter matching requirements.

APTC80DDA15T3GAPTC80DDA15T3G

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