APTC80TA15PG

Description：MOSFET 6N-CH 800V 28A SP6-P
Series：-

SKU:d75af86c82fb Category: FET, MOSFET Arrays Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：MOSFET 6N-CH 800V 28A SP6-P
Series：-
Mfr：Microchip Technology
Package：Bulk
Technology：MOSFET (Metal Oxide)
Configuration：6 N-Channel (3-Phase Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：800V
Current - Continuous Drain (Id) @ 25°C：28A
Rds On (Max) @ Id, Vgs：150mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs：180nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：4507pF @ 25V
Power - Max：277W
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SP6
Supplier Device Package：SP6-P
Grade：-
Qualification：-

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APTC80TA15PG

Overview

The APTC80TA15PG is a six-channel N-channel MOSFET module designed for three-phase bridge applications. It utilizes CoolMOS technology to achieve an on-state resistance of 150 milliohms at 14 amperes and 10 volts. The device supports a drain-to-source voltage of 800 volts and a pulsed drain current of 110 amperes. It operates within a junction temperature range of -40°C to 150°C and is housed in an SP6 chassis-mount package.

Feature Summary

Integrates six N-channel MOSFETs into a single module for three-phase bridge configurations
Employs CoolMOS technology to minimize conduction losses
Supports high-voltage operation with 800V drain-to-source capability
Features robust thermal performance suitable for chassis mounting

Applications

Three-phase motor drives
Industrial power conversion systems
Inverter circuits

Procurement Notes

Verify the specific package variant, as SP6 denotes chassis mount. Confirm thermal interface requirements and mounting hardware compatibility before integration. Ensure the application design accounts for the 110A pulsed current rating and 277W power dissipation limits. Cross-reference the datasheet for precise gate-source voltage specifications and switching characteristics to ensure system reliability.

Selection Notes

Select this module when a compact solution for three-phase bridges is required. The low on-state resistance makes it suitable for efficiency-critical designs. Consider the chassis-mount form factor for direct heatsink attachment. Evaluate the 800V rating against the system's maximum bus voltage to ensure adequate safety margins during transient events.

Part Context

This component belongs to Microchip's discrete power semiconductor portfolio, specifically leveraging CoolMOS technology for enhanced performance. It serves as a key building block for high-power electronic systems requiring reliable switching capabilities. The module integrates multiple channels to simplify layout and reduce component count compared to discrete solutions.