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Product Detailed Parameters
- Description：MOSFET 2N-CH 900V 30A SP1
- Series：CoolMOS™
- Mfr：Microsemi Corporation
- Package：Tray
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N Channel (Dual Buck Chopper)
- FET Feature：-
- Drain to Source Voltage (Vdss)：900V
- Current - Continuous Drain (Id) @ 25°C：30A
- Rds On (Max) @ Id, Vgs：120mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs：270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：6800pF @ 100V
- Power - Max：250W
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Grade：-
- Qualification：-
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Overview
The APTC90DDA12T1G is a dual boost chopper Super Junction MOSFET power module manufactured by Microsemi. It features a CoolMOS technology with a drain-source breakdown voltage of 900 V and a maximum continuous drain current of 30 A at 25°C case temperature. The device integrates an internal NTC thermistor for temperature monitoring and includes a chopper diode rated for 1200 V reverse voltage. Key electrical parameters include a maximum on-resistance of 120 mΩ, a total gate charge of 270 nC, and a junction-to-case thermal resistance of 0.50 °C/W for the MOSFET leg.
Feature Summary
- Integrates a high-performance CoolMOS transistor with a dedicated chopper diode in a single isolated package.
- Features ultra-low on-resistance and low gate charge to support high-frequency operation.
- Includes an internal NTC thermistor for precise junction temperature monitoring.
- Designed with symmetrical structure and very low stray inductance for rugged performance.
Applications
- AC and DC motor control systems
- Switched Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
Procurement Notes
Verify component authenticity through authorized Microsemi distributors or certified suppliers. Confirm that the received unit matches the specific SP1 package outline and pin configuration. Ensure proper electrostatic discharge handling procedures are followed during storage and installation, as the device is sensitive to ESD damage.
Selection Notes
Select this module for applications requiring high switching efficiency and compact form factors. The integrated chopper diode simplifies circuit design for boost topologies. Consider the thermal management requirements based on the specified junction-to-case thermal resistance and operating temperature range when designing heatsinking solutions.
Part Context
This component belongs to the Microsemi CoolMOS family, utilizing Super Junction technology to achieve superior performance compared to standard planar MOSFETs. The SP1 package provides a robust mechanical solution with direct mounting capabilities to heatsinks, facilitating efficient thermal dissipation in power electronics designs.
Replacement Considerations
Consult official Microsemi documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage ratings, current capabilities, and package dimensions.
FAQ
What is the isolation voltage rating of the APTC90DDA12T1G?
The RMS isolation voltage between any terminal and the case is rated at 4000 V for one minute at 50/60 Hz.
How does the device handle avalanche energy?
The device is avalanche energy rated, supporting a repetitive avalanche energy of 2.9 mJ and a single pulse avalanche energy of 1940 mJ.
What is the function of the internal thermistor?
The internal NTC thermistor allows for real-time monitoring of the junction temperature to prevent overheating and ensure reliable operation within the specified temperature range.
