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Product Detailed Parameters
- Description：IGBT MODULE 600V 50A 250W SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 50A
- Input：Single Phase Bridge Rectifier
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Power - Max：250 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.15 nF @ 25 V
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Overview
The APTCV60HM45RCT3G is a power module from Microchip Technology, classified as a PM-MOSFET-COOLMOS-SBD-SP3F device. It features a secondary fast rectifier and full bridge inverter configuration. The module utilizes Superjunction silicon technology with Si MOSFET drivers. Key electrical parameters include a voltage rating of 600V, a current capacity of 38A to 50A, and a typical on-resistance (RDSon) of 45mΩ. The package type is SP3F.
Feature Summary
- Integrates a secondary fast rectifier with a full bridge inverter topology for efficient power conversion.
- Utilizes CoolMOS Superjunction silicon technology to achieve low on-resistance and high performance.
- Designed for chassis mounting within the SP3F package form factor.
Applications
- Full bridge inverter circuits
- Power supply systems requiring secondary rectification
- Industrial motor drive applications
Procurement Notes
Verify the specific datasheet revision and pinout compatibility before integration, as packaging variants within the SP3 family may differ. Confirm thermal management requirements align with the module's junction-to-case thermal resistance specifications. Ensure that the driving circuitry supports the gate charge characteristics of the CoolMOS technology. Cross-reference the manufacturer's latest product change notifications to confirm component availability and material compliance status prior to finalizing procurement orders.
Selection Notes
Select this module when designing systems requiring a combined full bridge and fast recovery rectifier solution in a single compact package. The 45mΩ RDSon value suggests suitability for applications prioritizing conduction loss reduction. Consider the SP3F footprint constraints during PCB layout. Evaluate the 600V rating against peak transient voltages in the target circuit to ensure adequate safety margins for robust operation under varying load conditions.
Part Context
This component belongs to Microchip's APTC series of power modules, which are engineered for high-efficiency switching applications. The series leverages CoolMOS technology to provide superior performance compared to traditional silicon devices. The APTCV60HM45RCT3G specifically addresses needs for integrated rectification and inversion in a standardized chassis-mountable format, supporting modern power electronics designs.
Replacement Considerations
Public confirmed substitute part numbers include APTC60HM70RT3G and APTC60HM45SCTG. Verify electrical parameter compatibility and mechanical footprint alignment before substitution. Note that differences in RDSon or package type (e.g., SP4 vs SP3F) may impact thermal and electrical performance.
FAQ
What is the typical on-resistance of the APTCV60HM45RCT3G?
The typical on-resistance (RDSon) is 45mΩ.
Does this module include a rectifier?
Yes, it integrates a secondary fast rectifier along with a full bridge inverter configuration.
