APTCV60HM70RT3G

Overview

The APTCV60HM70RT3G is a high-voltage power module integrating Trench & Field Stop IGBT3 top switches and CoolMOS bottom switches within an isolated SP3 package. It features a full bridge configuration with an integrated rectifier bridge, rated for 600V breakdown voltage. The IGBTs support a continuous collector current of 50A at 80°C case temperature with a saturation voltage of 1.9V. The CoolMOS devices provide a maximum on-resistance of 70mΩ at 25°C and handle up to 39A continuous drain current. The module includes an internal NTC thermistor for temperature monitoring and offers low thermal resistance for efficient heat dissipation.

Feature Summary

• Combines Trench & Field Stop IGBT3 technology for low voltage drop with CoolMOS technology for ultra-low on-resistance and gate charge.
• Features very low stray inductance design and Kelvin source connections to facilitate easy drive circuitry and reduce switching noise.
• Includes an internal NTC thermistor for precise junction temperature monitoring and protection.
• Provides direct mounting capability to heatsinks with solderable terminals for both power and signal connections.

Applications

• Solar converters
• High-frequency power supplies
• Motor drives

Procurement Notes

Verify the specific revision status and RoHS compliance details directly with Microsemi or authorized distributors before procurement. Confirm that the SP3 package dimensions and mounting torque requirements align with the mechanical design constraints of the target application. Ensure proper electrostatic discharge handling procedures are followed during assembly.

Selection Notes

Select this module for applications requiring high switching frequencies up to 20 kHz and optimized conduction losses. Consider the positive temperature coefficient of VCEsat for easy paralleling if higher current capacity is needed. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance values for both IGBT and MOSFET sections.

Part Context

This component belongs to the PM-MOSFET-COOLMOS-SP3 product family from Microsemi. It represents a hybrid solution leveraging Infineon's CoolMOS technology alongside Microsemi's proprietary IGBT3 technology. The SP3 package provides a compact, isolated form factor suitable for dense power electronics designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires matching the electrical ratings, pinout configuration, and thermal characteristics of the original SP3 package module.

FAQ

What is the maximum operating frequency supported by the top switches?

The Trench & Field Stop IGBT3 top switches are rated for switching frequencies up to 20 kHz.

How is the junction temperature monitored in this module?

The module incorporates an internal NTC thermistor for temperature monitoring, allowing for real-time thermal protection and management.

What is the isolation voltage rating of the SP3 package?

The RMS isolation voltage between any terminal and the case is rated at 4000 V for 1 minute at 50/60 Hz.