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Product Detailed Parameters
- Description：IGBT MODULE 600V 50A 90W SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Three Level Inverter - IGBT, FET
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Power - Max：90 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：1.6 nF @ 25 V
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Overview
The APTCV60TLM99T3G is a three-level inverter IGBT module manufactured by Microchip Technology. It utilizes Superjunction MOSFET and Trench silicon technology within an SP3F package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 30 A. Key electrical parameters include a typical on-resistance (RDSon) of 99 mΩ and a power dissipation capacity of 90 W at 25°C. The module employs Si MOSFET driver type configuration.
Feature Summary
- Designed for three-level inverter applications
- Integrates Superjunction MOSFET and Trench silicon technology
- Utilizes SP3F press-in PCB mounting format
Applications
- Three-level inverter systems
- Industrial motor drives
- Power conversion equipment
Procurement Notes
Verify the specific package variant, as sources indicate both SP3 and SP3F designations. Confirm the lead time of approximately 26 weeks with the supplier prior to ordering. Ensure the application requires the specified 600V rating and 30A current capacity. Check RoHS compliance details if environmental regulations apply to the final assembly. Validate the press-in PCB mounting requirement against the target system design.
Selection Notes
Select this component when a three-level inverter topology is required. The 99 mΩ RDSon value influences conduction losses; verify thermal management capabilities for the 90 W dissipation rating. Compare the 30 A continuous current limit against peak load requirements. Consider the SP3F package dimensions for board layout compatibility. Evaluate the Si MOSFET driver type integration against gate drive circuit constraints.
Part Context
This part belongs to Microchip Technology's IGBT modules category, specifically under the PM-MOSFET-COOLMOS-SP3 product line. It is categorized within discrete and power modules, utilizing silicon technology. The manufacturer provides ECAD models and datasheets for design integration. Related products in the series include variants with different current ratings or package configurations.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal characteristics before considering any alternative components from other manufacturers.
