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Product Detailed Parameters
- Description:DIODE MODULE GEN PURP 1200V 485A
- Series:-
- Mfr:Microchip Technology
- Package:Bulk
- Diode Configuration:1 Pair Series Connection
- Technology:Standard
- Voltage - DC Reverse (Vr) (Max):1200 V
- Current - Average Rectified (Io) (per Diode):485A
- Voltage - Forward (Vf) (Max) @ If:2 V @ 300 A
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):-
- Current - Reverse Leakage @ Vr:20 µA @ 1200 V
- Operating Temperature - Junction:-40°C ~ 175°C
- Mounting Type:Chassis Mount
- Package / Case:Module
- Supplier Device Package:-
- Grade:-
- Qualification:-
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Overview
The APTDX300A120D16AG is a 1200V, 300A fast diode phase-leg power module. It features an M6 screw mount configuration with an aluminum nitride substrate for improved thermal performance. The device provides a peak repetitive reverse voltage of 1200V and supports a DC forward current of up to 485A at 25°C case temperature. Electrical characteristics include a maximum forward voltage of 2V at 300A and 25°C junction temperature. Reverse leakage current is limited to 20μA at 1200V. The module operates within a junction temperature range of -40°C to 175°C.
Feature Summary
- Soft-recovery characteristics for low-noise switching
- Aluminum Nitride substrate for improved thermal performance
- Direct mounting to heatsink via isolated package design
Applications
- Uninterruptible Power Supply (UPS)
- Induction heating
- Welding equipment
- High-speed rectifiers
Procurement Notes
Verify the specific datasheet revision DS00005303A against your design requirements. Confirm that the M6 mounting torque specifications align with your mechanical assembly guidelines. Ensure electrostatic discharge handling procedures are strictly followed during installation due to component sensitivity. Cross-reference the isolation voltage ratings with your system's safety standards before finalizing procurement.
Selection Notes
Select this module when high blocking voltage and significant current capacity are required in a phase-leg configuration. The aluminum nitride substrate makes it suitable for applications demanding efficient heat dissipation. Evaluate the soft-recovery traits if minimizing switching noise is critical. Verify that the operating temperature range meets the environmental conditions of the intended deployment site.
Part Context
This component belongs to Microchip Technology's Adaptec power module portfolio. It utilizes silicon technology optimized for high-power industrial applications. The D1 package outline defines its physical dimensions and terminal layout. The product is designed to integrate directly into power conversion systems requiring robust diode protection and rectification capabilities.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the recommended junction temperature under switching conditions?
The recommended junction temperature under switching conditions ranges from -40°C to TJmax minus 25°C.
How does the forward voltage change with temperature?
The forward voltage decreases as the junction temperature increases, dropping from a typical 1.75V at 25°C to 1.52V at 175°C at 300A.
What is the RMS isolation voltage rating?
The RMS isolation voltage between any terminal and the case is rated at 4000V for one minute at 50/60Hz.
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