APTGF100A120TG

APTGF100A120TG

$53.21
  • Description:IGBT MODULE 1200V 135A 568W SP4
  • Series:-

SKU:b1c4170665a8 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 1200V 135A 568W SP4
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:NPT
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:3.7V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:SP4
  • Supplier Device Package:SP4
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):135 A
  • Power - Max:568 W
  • Current - Collector Cutoff (Max):350 µA
  • Input Capacitance (Cies) @ Vce:6.9 nF @ 25 V

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APTGF100A120TG

Overview

The APTGF100A120TG is a single-phase leg Non Punch Through (NPT) Fast IGBT power module manufactured by Microchip Technology. It features an isolated SP4 package with screw mounting and includes an internal NTC thermistor for temperature monitoring. The device supports a collector-emitter breakdown voltage of 1200 V, with continuous collector currents rated at 135 A at 25°C and 100 A at 80°C case temperature. Maximum power dissipation is 568 W at 25°C. The module incorporates soft recovery parallel diodes and utilizes Kelvin emitter connections to minimize stray inductance.

Feature Summary

  • Non Punch Through (NPT) Fast IGBT technology providing low voltage drop and low tail current
  • Soft recovery parallel diodes designed for low forward voltage and leakage current
  • Kelvin emitter configuration integrated for simplified gate drive circuitry
  • Internal NTC thermistor embedded for precise junction temperature monitoring

Applications

  • Welding converters
  • Switched Mode Power Supplies
  • Uninterruptible Power Supplies
  • Motor control systems

Procurement Notes

Verify the specific revision level against the latest official datasheet before procurement. Confirm that the ordering suffix matches the required thermal interface and terminal specifications. Ensure proper electrostatic discharge handling procedures are followed during storage and installation. Validate component authenticity through authorized distribution channels.

Selection Notes

Select this module based on the 1200 V blocking capability and the specific current requirements of the application. Consider the thermal resistance characteristics when designing the heatsink system. Evaluate switching losses at the intended operating frequency and gate resistance values. Verify compatibility with the SP4 package dimensions and mounting torque specifications.

Part Context

This component belongs to the Microsemi phase leg NPT IGBT power module family. It is engineered for high-frequency operation up to 50 kHz. The design emphasizes ruggedness and stable temperature behavior. The module integrates both IGBT and diode functions within a single isolated package structure.

Replacement Considerations

Consult official Microchip documentation for confirmed substitute part numbers. Verify electrical parameters and pinout compatibility before substitution. Ensure the replacement module meets the same isolation voltage and thermal performance standards.

APTGF100A120TGAPTGF100A120TG
$53.21
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