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Product Detailed Parameters
- Description：IGBT MODULE 600V 230A 781W D1
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：NPT
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 200A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：D1
- Supplier Device Package：D1
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：230 A
- Power - Max：781 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：9 nF @ 25 V
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Overview
The APTGF165A60D1G is a single NPT IGBT module manufactured by Microsemi Corporation. It features a maximum collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 165 A. The device has a maximum power dissipation of 720 W and is housed in an isolated flange-mount package designated as MODULE-7. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.4 V at 165 A and a typical input capacitance of 3.8 nF measured at 25 V.
Feature Summary
- NPT technology for robust high-voltage performance
- Isolated base for direct heatsink mounting
- Single configuration with integrated anti-parallel diode
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Inverter circuits
Procurement Notes
Verify the specific suffix D1G against official Microsemi documentation to confirm pinout and terminal configuration. Check component status as legacy products may be discontinued. Ensure thermal interface materials are compatible with the isolated flange mount design for proper heat dissipation.
Selection Notes
Select this module for applications requiring 600 V blocking capability and moderate current handling up to 165 A. Consider the 2.4 V saturation voltage for conduction loss calculations. Verify that the switching frequency requirements align with the device's capacitive characteristics and thermal resistance limits.
Part Context
This component belongs to the Microsemi APTGF series of insulated gate bipolar transistor modules. These modules utilize Non-Punch Through (NPT) technology, which is designed to provide reliable operation in high-power industrial environments. The series typically offers various voltage and current ratings within standardized package footprints.
Replacement Considerations
Direct replacements must match the 600 V / 165 A / MODULE-7 specifications. Cross-reference with other manufacturers offering equivalent NPT IGBT modules in the same footprint. Verify that the replacement part maintains identical pin assignments and thermal characteristics to ensure compatibility with existing PCB layouts and cooling systems.
