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Product Detailed Parameters
- Description：IGBT MODULE 600V 220A 833W SP6
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- IGBT Type：NPT
- Configuration：Asymmetrical Bridge
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 180A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：SP6
- Supplier Device Package：SP6
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：220 A
- Power - Max：833 W
- Current - Collector Cutoff (Max)：300 µA
- Input Capacitance (Cies) @ Vce：8.6 nF @ 25 V
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Overview
The APTGF180DH60G is a Non-Punch Through (NPT) asymmetrical bridge IGBT power module manufactured by Microsemi. It features an integrated antiparallel diode and operates with a collector-emitter breakdown voltage of 600 V. The continuous collector current is rated at 220 A at Tc = 25°C and 180 A at Tc = 80°C, with a pulsed collector current capability of 630 A. The maximum power dissipation is 833 W at Tc = 25°C. Electrical characteristics include a collector-emitter saturation voltage of 2.5 V at VGE = 15V and IC = 180A. The device utilizes an SP6 isolated package designed for direct heatsink mounting.
Feature Summary
- Non-Punch Through (NPT) Fast IGBT technology providing low voltage drop and low tail current
- Soft recovery parallel diodes with low forward voltage and low leakage current
- Kelvin emitter configuration to facilitate easy gate drive connections
- Symmetrical design with M5 power connectors ensuring very low stray inductance
Applications
- Welding converters
- Switched Mode Power Supplies
- Switched Reluctance Motor Drives
Procurement Notes
Verify the specific revision level against the official datasheet before procurement. Confirm that the SP6 package dimensions and mounting torque specifications align with the mechanical constraints of the target application. Ensure electrostatic discharge handling procedures are strictly followed during installation, as the devices are sensitive to ESD.
Selection Notes
Select this component for high-frequency applications up to 100 kHz due to its optimized switching performance. Consider the positive temperature coefficient of VCE(sat) when designing circuits requiring stable paralleling operation. Evaluate the thermal resistance and operating junction temperature range to ensure adequate cooling solutions are implemented for sustained loads.
Part Context
This module belongs to the NPT IGBT Power Module family from Microsemi. It is engineered to balance conduction and switching losses, making it suitable for robust industrial environments. The SP6 package provides electrical isolation and allows for direct mounting to a heatsink, simplifying the thermal management architecture in power conversion systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drivers and thermal interfaces if considering alternative modules within the same voltage and current ratings.
