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The APTGF30H60T3G is a full-bridge NPT IGBT power module manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 30 A at a case temperature of 80°C. The device has a maximum power dissipation of 140 W and operates within a junction temperature range of -40°C to 150°C. It utilizes an SP3 package with screw mounting and includes an internal thermistor for temperature monitoring.
Verify the specific revision level against the latest official datasheet before procurement. Confirm that the SP3 package outline matches the mechanical constraints of the target heatsink interface. Ensure gate drive circuits are compatible with the specified threshold voltages and total gate charge requirements to prevent switching anomalies.
Select this component when a compact full-bridge topology is required for 600 V applications. The SP3 package allows direct mounting to isolated heatsinks, simplifying thermal design. Consider the positive temperature coefficient of VCE(sat) if paralleling legs is necessary to achieve higher phase leg current capabilities.
This module belongs to the Microsemi APTGF series of non-punch-through IGBT power modules. It is part of a family designed for high-frequency operation and integrates both IGBTs and anti-parallel diodes into a single insulated package. The series supports various configurations including half-bridge and full-bridge topologies.
Cross-reference with other Microsemi APTGF series modules such as the APTGF50H60T3G for higher current requirements. Verify pinout compatibility and thermal resistance specifications when substituting with similar full-bridge modules from other manufacturers.
The internal thermistor provides real-time temperature monitoring of the module junction, allowing for active thermal protection and management within the application circuit.
The Kelvin emitter separates the gate drive return path from the high-current power return path, reducing the impact of stray inductance on the gate signal and ensuring stable switching behavior.
The module is designed for switching frequencies up to 50 kHz, supported by its fast NPT IGBT technology and soft recovery diodes.