APTGF30H60T3G

APTGF30H60T3G

$24.71
  • Description:IGBT MODULE 600V 42A 140W SP3
  • Series:-

SKU:c0a08e1826a1 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 42A 140W SP3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:NPT
  • Configuration:Full Bridge Inverter
  • Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 30A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):42 A
  • Power - Max:140 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:1.35 nF @ 25 V

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APTGF30H60T3G

Overview

The APTGF30H60T3G is a full-bridge NPT IGBT power module manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 30 A at a case temperature of 80°C. The device has a maximum power dissipation of 140 W and operates within a junction temperature range of -40°C to 150°C. It utilizes an SP3 package with screw mounting and includes an internal thermistor for temperature monitoring.

Feature Summary

  • Non-Punch Through (NPT) Fast IGBT technology providing low voltage drop, low tail current, and switching frequencies up to 50 kHz.
  • Integrated Kelvin emitter configuration designed to minimize stray inductance and facilitate easy drive circuitry.
  • Internal NTC thermistor included for precise temperature monitoring and thermal management.
  • Soft recovery parallel diodes characterized by low forward voltage and low leakage current.

Applications

  • Welding converters
  • Switched Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor control systems

Procurement Notes

Verify the specific revision level against the latest official datasheet before procurement. Confirm that the SP3 package outline matches the mechanical constraints of the target heatsink interface. Ensure gate drive circuits are compatible with the specified threshold voltages and total gate charge requirements to prevent switching anomalies.

Selection Notes

Select this component when a compact full-bridge topology is required for 600 V applications. The SP3 package allows direct mounting to isolated heatsinks, simplifying thermal design. Consider the positive temperature coefficient of VCE(sat) if paralleling legs is necessary to achieve higher phase leg current capabilities.

Part Context

This module belongs to the Microsemi APTGF series of non-punch-through IGBT power modules. It is part of a family designed for high-frequency operation and integrates both IGBTs and anti-parallel diodes into a single insulated package. The series supports various configurations including half-bridge and full-bridge topologies.

Replacement Considerations

Cross-reference with other Microsemi APTGF series modules such as the APTGF50H60T3G for higher current requirements. Verify pinout compatibility and thermal resistance specifications when substituting with similar full-bridge modules from other manufacturers.

FAQ

What is the function of the internal thermistor?

The internal thermistor provides real-time temperature monitoring of the module junction, allowing for active thermal protection and management within the application circuit.

How does the Kelvin emitter improve performance?

The Kelvin emitter separates the gate drive return path from the high-current power return path, reducing the impact of stray inductance on the gate signal and ensuring stable switching behavior.

What is the maximum operating frequency capability?

The module is designed for switching frequencies up to 50 kHz, supported by its fast NPT IGBT technology and soft recovery diodes.

APTGF30H60T3GAPTGF30H60T3G
$24.71
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