APTGF350A60G

Overview

The APTGF350A60G is a phase leg Non-Punch Through (NPT) IGBT power module manufactured by Microsemi. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 350 A at a case temperature of 80°C. The device supports a maximum power dissipation of 1562 W and operates within a junction temperature range of -40°C to +150°C. Integrated with soft recovery parallel diodes, the module provides low forward voltage drop and tail current. It utilizes an SP6 isolated package with M5 power connectors and includes Kelvin emitter connections for optimized gate drive.

Feature Summary

• Non-Punch Through (NPT) Fast IGBT technology providing low voltage drop and low tail current
• Soft recovery parallel diodes engineered for low forward voltage and minimal leakage current
• Kelvin emitter configuration designed to facilitate easy and stable gate drive
• Symmetrical design with very low stray inductance utilizing M5 power connectors

Applications

• Welding converters
• Switched Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• Motor control systems

Procurement Notes

Verify component authenticity through authorized Microsemi distributors or official channels. Confirm the specific revision level matches project requirements, as datasheet specifications may be subject to change without notice. Ensure proper electrostatic discharge handling procedures are followed during receipt and storage, as the devices are sensitive to static damage. Validate thermal interface material compatibility with the SP6 package outline before assembly.

Selection Notes

Select this module for high-frequency applications operating up to 100 kHz due to its fast switching characteristics. Consider the positive temperature coefficient of VCE(sat) when designing paralleled configurations to ensure stable current sharing. Evaluate the thermal resistance values against the expected heat sink capacity to maintain junction temperatures within the specified safe operating area limits under varying load conditions.

Part Context

The APTGF350A60G belongs to the NPT IGBT Power Module family produced by Microsemi. This series is characterized by robust performance in high-power conversion environments. The module integrates both the IGBT switch and the anti-parallel diode into a single isolated package, simplifying circuit layout and reducing parasitic inductance compared to discrete component solutions.

Replacement Considerations

Direct substitutes include the APTGF350A60G variant from Microsemi. Other compatible phase leg modules within the same electrical class should be evaluated based on pinout compatibility, thermal resistance metrics, and mechanical dimensions to ensure seamless integration into existing PCB layouts and cooling structures.