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Product Detailed Parameters
- Description：IGBT MODULE 600V 65A 250W SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：NPT
- Configuration：Dual Boost Chopper
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：65 A
- Power - Max：250 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：2.2 nF @ 25 V
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Overview
The Microchip Technology APTGF50DDA60T3G is a dual boost chopper NPT IGBT power module. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 65 A at 25°C case temperature, or 50 A at 80°C. The maximum power dissipation is 250 W at 25°C. The junction-to-case thermal resistance is 0.5 °C/W for the IGBT and 0.9 °C/W for the diode. The operating junction temperature range spans from -40°C to 150°C. The package provides an RMS isolation voltage of 4000 V between terminals and the case.
Feature Summary
- Non-Punch Through (NPT) Fast IGBT technology with low voltage drop and soft recovery parallel diodes
- Kelvin emitter configuration for simplified gate drive circuitry
- Integrated internal thermistor for precise temperature monitoring
- Symmetrical design enabling easy paralleling of legs for increased current capability
Applications
- AC and DC motor control systems
- Switched Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
Procurement Notes
Verify component authenticity by cross-referencing the part number against official Microchip Technology documentation. Confirm that the specific revision matches the required datasheet version. Ensure handling procedures account for electrostatic discharge sensitivity as specified in application note APT0502. Validate that the SP3 package mounting torque requirements are met during installation.
Selection Notes
Select this module for applications requiring high-frequency operation up to 50 kHz. Consider the positive temperature coefficient of VCEsat when designing parallel configurations to ensure balanced current sharing. Verify that the gate drive voltage aligns with the specified 15V typical threshold. Account for the 4000 V isolation requirement when designing safety barriers.
Part Context
This component belongs to the Microchip Technology NPT IGBT power module family. It utilizes the SP3 isolated package format designed for direct heatsink mounting. The series integrates both IGBT switches and anti-parallel diodes into a single unit to reduce system complexity and stray inductance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Microchip Technology documentation for potential alternatives.
