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Product Detailed Parameters
- Description：IGBT MODULE 600V 65A 250W SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：NPT
- Configuration：Asymmetrical Bridge
- Vce(on) (Max) @ Vge, Ic：2.45V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：65 A
- Power - Max：250 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：2.2 nF @ 25 V
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Overview
The APTGF50DH60T1G is a non-punch-through (NPT) fast IGBT power module manufactured by Microchip Technology. It features an asymmetrical bridge configuration within an isolated SP1 package. The device supports a collector-emitter breakdown voltage of 600 V and a continuous collector current of 50 A at a case temperature of 80°C. Maximum power dissipation reaches 250 W at 25°C, with a junction-to-case thermal resistance of 0.5 °C/W for the IGBT. The module integrates internal NTC thermistors for temperature monitoring and includes protection diodes.
Feature Summary
- Non-punch-through (NPT) fast IGBT technology providing low voltage drop and low tail current
- Soft recovery parallel diodes designed to minimize reverse recovery losses
- Symmetrical design architecture ensuring very low stray inductance
- Integrated internal NTC thermistor for precise temperature monitoring
Applications
- Welding converters
- Switched Mode Power Supplies
- Uninterruptible Power Supplies
- Motor control systems
Procurement Notes
Verify component authenticity through authorized Microchip Technology distributors or certified supply chain partners. Confirm that the specific ordering suffix matches the required package and electrical specifications. Ensure proper electrostatic discharge handling procedures are followed during storage and installation to prevent damage to sensitive semiconductor structures.
Selection Notes
Select this module for applications requiring high-frequency operation up to 100 kHz. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure gate drive circuits provide the recommended 15V signal. Verify that short-circuit withstand capabilities align with system protection strategies.
Part Context
This component belongs to the Microsemi/ Microchip APTGF series of NPT IGBT modules. It utilizes the SP1 isolated package format, which allows direct mounting to heatsinks. The series is engineered for robust performance in industrial power conversion environments.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching electrical ratings, package dimensions, and thermal characteristics with equivalent NPT IGBT modules from other manufacturers.
FAQ
What is the maximum operating frequency for this module?
The module supports switching frequencies up to 100 kHz.
How does the module handle temperature monitoring?
It includes an integrated internal NTC thermistor for accurate temperature monitoring.
What is the isolation voltage rating?
The RMS isolation voltage between any terminal and the case is rated at 4000 V for one minute at 50/60Hz.
