APTGF50DSK120T3G

Overview

The APTGF50DSK120T3G is a dual buck chopper NPT IGBT power module manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current of 70 A at Tc = 25°C, with a pulsed current rating of 150 A. The device operates within a junction temperature range of -40°C to 150°C and dissipates up to 312 W at 25°C case temperature. Electrical characteristics include a typical VCE(sat) of 3.7 V at 50 A and 15 V gate drive. The integrated chopper diode supports a forward current of 60 A and exhibits a maximum reverse recovery charge of 2890 nC at 125°C.

Feature Summary

• Non-Punch Through (NPT) Fast IGBT technology providing low voltage drop and low tail current for high-frequency operation up to 50 kHz.
• Soft recovery parallel diodes with low forward voltage and leakage current, rated for Reverse Bias Safe Operating Area (RBSOA).
• Kelvin emitter configuration designed to facilitate easy drive circuitry connection and minimize stray inductance effects.
• Integrated internal thermistor for precise temperature monitoring and thermal management.

Applications

• AC and DC motor control systems
• Switched Mode Power Supplies (SMPS)
• Dual Buck Chopper circuits

Procurement Notes

Verify the specific revision level against official documentation before procurement, as component configurations may change without notice. Confirm that the SP3 package mounting torque requirements are met during assembly. Ensure electrostatic discharge handling procedures are strictly followed, as the devices are sensitive to ESD damage. Validate that the isolation voltage ratings align with the system's safety requirements.

Selection Notes

Select this module for applications requiring symmetrical design and positive temperature coefficient of VCEsat for easy paralleling. Consider the 4000 Vrms isolation voltage for systems demanding high electrical separation between terminals and the heatsink. Evaluate the thermal impedance curves to ensure adequate heatsinking for the specified operating frequencies and current loads.

Part Context

This component belongs to the Microchip Technology IGBT module family, specifically utilizing the SP3 package outline. It is part of the broader portfolio of discrete and power modules designed for industrial power conversion. The module integrates both NPT IGBTs and fast recovery diodes into a single isolated package for compact system designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing PCB layouts and cooling solutions if considering alternative manufacturers or pin-compatible variants from other product lines.

FAQ

What is the maximum operating frequency supported by this module?

The module supports switching frequencies up to 50 kHz, enabled by its Non-Punch Through (NPT) Fast IGBT technology and soft recovery parallel diodes.

How does the Kelvin emitter benefit the drive circuit?

The Kelvin emitter provides a dedicated path for the gate drive signal, separating it from the high-current emitter path. This reduces the impact of stray inductance and ensures stable gate voltage control during switching transitions.

Is the module suitable for paralleling to increase current capability?

Yes, the module features a positive temperature coefficient for VCEsat, which facilitates easy paralleling. Each leg can be paralleled to achieve a single buck configuration with twice the current capability.