APTGF75H120TG

Overview

The APTGF75H120TG is a full-bridge NPT IGBT power module manufactured by Microchip Technology. It features a collector-emitter breakdown voltage of 1200 V and a continuous collector current rating of 75 A at Tc = 80°C, with a pulsed current capacity of 150 A. The device utilizes an SP4 package with screw mounting and includes an internal thermistor for temperature monitoring. Electrical characteristics include a maximum collector-emitter saturation voltage of 3.9 V at Tj = 125°C and a gate-emitter leakage current of ±500 nA. The module supports switching frequencies up to 50 kHz and provides an RMS isolation voltage of 4000 V between terminals and the case.

Feature Summary

• Non-Punch Through (NPT) Fast IGBT technology providing low voltage drop and soft recovery parallel diodes
• Kelvin emitter configuration designed to facilitate easy drive circuit connections
• Symmetrical design with lead frames for power connections to achieve very low stray inductance
• Internal NTC thermistor integrated for direct temperature monitoring

Applications

• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control systems

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or official channels. Confirm that the specific revision matches the required datasheet version. Ensure proper electrostatic discharge handling procedures are followed during storage and installation. Validate thermal interface material compatibility with the SP4 package mounting requirements.

Selection Notes

Select this module for applications requiring high-frequency operation up to 50 kHz and robust short-circuit withstand capability. Consider the positive temperature coefficient of VCEsat for stable paralleling if higher current capacity is needed. Evaluate the SP4 package dimensions and M5 mounting torque specifications against the mechanical constraints of the heatsink assembly.

Part Context

This component belongs to the APTGF series of full-bridge IGBT modules from Microchip Technology. It represents a non-punch-through design optimized for medium-power industrial applications. The module integrates both IGBT switches and anti-parallel diodes within a single isolated package, simplifying the design of bridge circuits compared to discrete component implementations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and thermal resistance values when evaluating alternative full-bridge modules from other manufacturers.