APTGF90H60T3G

APTGF90H60T3G

$44.33
  • Description:IGBT MODULE 600V 120A 416W SP3
  • Series:-

SKU:f032d9a039fe Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 120A 416W SP3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:NPT
  • Configuration:Full Bridge Inverter
  • Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):120 A
  • Power - Max:416 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:4.4 nF @ 25 V

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APTGF90H60T3G

Overview

The APTGF90H60T3G is a full-bridge NPT IGBT power module manufactured by Microchip Technology. It features a 600 V collector-emitter breakdown voltage and supports a continuous collector current of 90 A at an 80°C case temperature, with a pulsed current rating of 315 A. The device has a maximum power dissipation of 416 W and operates within a junction temperature range of -40°C to 150°C. It utilizes the SP3 package with screw mounting and includes an internal thermistor for thermal monitoring.

Feature Summary

  • Non-Punch Through (NPT) Fast IGBT technology providing low voltage drop and low tail current
  • Soft recovery parallel diodes with low forward voltage and leakage current
  • Kelvin emitter configuration designed for easy gate drive implementation
  • Integrated internal thermistor for precise temperature monitoring

Applications

  • Welding converters
  • Switched Mode Power Supplies
  • Uninterruptible Power Supplies
  • Motor control systems

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or certified supply chain partners. Confirm that the delivered units match the specific APTGF90T3G series designation and packaging requirements. Ensure proper electrostatic discharge handling procedures are followed during receipt and storage to prevent damage to sensitive semiconductor structures.

Selection Notes

Select this module for applications requiring high-frequency operation up to 100 kHz. Consider the symmetrical design and positive temperature coefficient of VCE(sat) when designing circuits that require easy paralleling of legs to achieve higher phase current capabilities. Evaluate the thermal resistance characteristics against the specific heatsinking constraints of the target application.

Part Context

This component belongs to the Microchip Technology APTGT/APTGF series of non-punch-through IGBT modules. These devices utilize trench field-stop technology optimized for high switching frequencies. The SP3 package provides a standardized footprint for industrial power electronics, facilitating direct mounting to heatsinks while maintaining electrical isolation between terminals and the base plate.

Replacement Considerations

Direct replacements must maintain the 600V rating, 90A continuous current capacity, and SP3 package form factor. Verify compatibility of gate drive requirements and thermal interface specifications before substitution. Cross-reference datasheets for equivalent switching energy losses and reverse recovery characteristics to ensure circuit stability.

APTGF90H60T3GAPTGF90H60T3G
$44.33
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